TSM2323CX RFG Tech Spezifikatioune
Taiwan Semiconductor Corporation - TSM2323CX RFG technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Taiwan Semiconductor Corporation - TSM2323CX RFG
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Taiwan Semiconductor | |
| Vgs (th) (Max) @ Id | 1V @ 250µA | |
| Vgs (Max) | ±8V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | SOT-23 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 4.7A, 4.5V | |
| Power Dissipation (Max) | 1.25W (Ta) | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1020 pF @ 10 V | |
| Gate Charge (Qg) (Max) @ Vgs | 12.5 nC @ 4.5 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
| Entworf fir Source Voltage (Vdss) | 20 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.7A (Ta) | |
| Basis Produktnummer | TSM2323 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Taiwan Semiconductor Corporation TSM2323CX RFG.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | TSM2323CX RFG | TSM240N03CX RFG | TSM2328CX | TSM2318CX RFG |
| Hiersteller | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation |
| Vgs (th) (Max) @ Id | 1V @ 250µA | 2.5V @ 250µA | 2.5V @ 250µA | 3V @ 250µA |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 4.7A, 4.5V | 24mOhm @ 6A, 10V | 250mOhm @ 1.5A, 10V | 45mOhm @ 3.9A, 10V |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Gate Charge (Qg) (Max) @ Vgs | 12.5 nC @ 4.5 V | 4.1 nC @ 4.5 V | 11.1 nC @ 5 V | 10 nC @ 10 V |
| Entworf fir Source Voltage (Vdss) | 20 V | 30 V | 100 V | 40 V |
| FET Typ | P-Channel | N-Channel | N-Channel | N-Channel |
| Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | 4.5V, 10V | 10V | 4.5V, 10V |
| Vgs (Max) | ±8V | ±20V | ±20V | ±20V |
| Serie | - | - | - | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Basis Produktnummer | TSM2323 | TSM240 | TSM2328 | TSM2318 |
| Supplier Device Package | SOT-23 | SOT-23 | SOT-23 | SOT-23 |
| FET Feature | - | - | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1020 pF @ 10 V | 345 pF @ 25 V | 975 pF @ 25 V | 540 pF @ 20 V |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.7A (Ta) | 6.5A (Tc) | 1.5A (Ta) | 3.9A (Ta) |
| Power Dissipation (Max) | 1.25W (Ta) | 1.56W (Tc) | 1.38W (Ta) | 1.25W (Ta) |
Eroflueden TSM2323CX RFG PDF DataDhusts an Taiwan Semiconductor Corporation Dokumentatioun fir TSM2323CX RFG - Taiwan Semiconductor Corporation.
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| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
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| Asien | Indien | 4 |
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| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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